Semiconductor memory and method of manufacturing the semiconductor memory

ABSTRACT

A semiconductor memory according to an embodiment includes first and second areas, an active region, a non-active region, a first stacked body, a plurality of first pillars, a first contact, a second stacked body, and a second contact. The active region includes part of each of the first and second areas. The non-active region includes part of each of the first and second areas. The second stacked body is in the non-active region. The second stacked body includes second insulators and second conductors which are alternately stacked. A second contact is in contact with a second conductor in a first interconnect layer and a second conductor in a second interconnect layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2018-137888, filed Jul. 23, 2018, theentire contents of which are incorporated herein by reference.

FIELD

An embodiment described herein relates generally to a semiconductormemory and a method of manufacturing the semiconductor memory.

BACKGROUND

NAND flash memories capable of storing data nonvolatilely are known.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing an example of a configuration of asemiconductor memory according to an embodiment.

FIG. 2 is a circuit diagram showing an example of a circuitconfiguration of a memory cell array included in the semiconductormemory according to the embodiment.

FIG. 3 is a plan view showing an example of a planar layout of thememory cell array included in the semiconductor memory according to theembodiment.

FIG. 4 is a plan view showing an example of a more detailed planarlayout of the memory cell array included in the semiconductor memoryaccording to the embodiment.

FIG. 5 is a plan view showing an example of a planar layout in a cellarea of the memory cell array included in the semiconductor memoryaccording to the embodiment.

FIG. 6 is a plan view showing an example of a more detailed planarlayout in the cell area of the memory cell array included in thesemiconductor memory according to the embodiment.

FIG. 7 is a sectional view showing an example of a sectionalconfiguration in the cell area of the memory cell array included in thesemiconductor memory according to the embodiment.

FIG. 8 is a sectional view showing an example of a sectionalconfiguration of a memory pillar in the semiconductor memory accordingto the embodiment.

FIG. 9 is a sectional view showing an example of a sectionalconfiguration in the cell area of the memory cell array included in thesemiconductor memory according to the embodiment.

FIG. 10 is a plan view showing an example of a planar layout in a hookuparea of the memory cell array included in the semiconductor memoryaccording to the embodiment.

FIGS. 11 and 12 are sectional views showing an example of a sectionalconfiguration in the hookup area of the memory cell array included inthe semiconductor memory according to the embodiment.

FIG. 13 is a plan view showing an example of the planar layout in thehookup area of the memory cell array included in the semiconductormemory according to the embodiment.

FIGS. 14 and 15 are sectional views showing an example of the sectionalconfiguration in the hookup area of the memory cell array included inthe semiconductor memory according to the embodiment.

FIG. 16 is a flowchart showing an example of a method of manufacturingthe semiconductor memory according to the embodiment.

FIG. 17 is a sectional view of the memory cell array, showing an exampleof a process of manufacturing the semiconductor memory according to theembodiment.

FIG. 18 is a plan view in the hookup area of the memory cell array,showing an example of the process of manufacturing the semiconductormemory according to the embodiment.

FIGS. 19 and 20 are sectional views of the memory cell array, showing anexample of the process of manufacturing the semiconductor memoryaccording to the embodiment.

FIG. 21 is a plan view in the hookup area of the memory cell array,showing an example of a method of measuring an amount of overlay shiftin the process of manufacturing the semiconductor memory according tothe embodiment.

FIG. 22 is a plan view in the hookup area of the memory cell array,showing an example of the process of manufacturing the semiconductormemory according to the embodiment.

FIG. 23 is a sectional view of the memory cell array, showing an exampleof the process of manufacturing the semiconductor memory according tothe embodiment.

FIG. 24 is a plan view in the hookup area of the memory cell array,showing an example of a method of measuring an amount of overlay shiftin the process of manufacturing the semiconductor memory according tothe embodiment.

FIGS. 25, 26, and 27 are sectional views of the memory cell array,showing an example of the process of manufacturing the semiconductormemory according to the embodiment.

FIG. 28 is a plan view showing an example of a planar layout in a hookuparea of a memory cell array included in a semiconductor memory accordingto a first modification to the embodiment.

FIG. 29 is a plan view in the hookup area of the memory cell array,showing an example of a method of measuring an amount of overlay shiftin the first modification to the embodiment.

FIG. 30 is a plan view showing an example of a planar layout in a hookuparea of a memory cell array included in a semiconductor memory accordingto a second modification to the embodiment.

FIG. 31 is a plan view in the hookup area of the memory cell array,showing an example of a method of measuring an amount of overlay shiftin the second modification to the embodiment.

FIG. 32 is a plan view showing an example of a planar layout in a hookuparea of a memory cell array included in a semiconductor memory accordingto a third modification to the embodiment.

FIG. 33 is a plan view in the hookup area of the memory cell array,showing an example of a method of measuring an amount of overlay shiftin the third modification to the embodiment.

FIG. 34 is a plan view showing an example of a planar layout in a hookuparea of a memory cell array included in a semiconductor memory accordingto a fourth modification to the embodiment.

FIG. 35 is a plan view showing an example of a planar layout of a memorycell array included in a semiconductor memory according to a fifthmodification to the embodiment.

FIG. 36 is a plan view showing an example of a planar layout in a hookuparea of the memory cell array included in the semiconductor memoryaccording to the fifth modification to the embodiment.

DETAILED DESCRIPTION

A semiconductor memory according to an embodiment includes first andsecond areas, an active region, a non-active region, a first stackedbody, a plurality of first pillars, a first contact, a second stackedbody, and a second contact. The first and second areas are arranged in afirst direction. The active region includes part of each of the firstand second areas. The non-active region includes part of each of thefirst and second areas. The first stacked body is in the active region.The first stacked body includes first insulators and first conductorswhich are alternately stacked. Each of the first conductors includes aterraced portion that does not overlap the upper first conductor in thesecond area. The plurality of first pillars each penetrates the firststacked body in the first area. The intersection between the firstpillar and the first conductor functions as a memory cell. The firstcontact is provided on a terraced portion of a first conductor in afirst interconnect layer. The second stacked body is in the non-activeregion. The second stacked body includes second insulators and secondconductors which are alternately stacked. Each of the second conductorsincludes a terraced portion that does not overlap the upper secondconductor in the second area. The second contact is in contact with asecond conductor in the first interconnect layer and a second conductorin a second interconnect layer different from the first interconnectlayer.

The embodiment will be described below with reference to theaccompanying drawings. The embodiment is directed to an example of adevice and a method for embodying the technical concept of theinvention. The drawings are schematic or conceptual, and none of thedimensions, ratio, etc. in each of the drawings is necessarily the sameas the actual one. The technical concept of the invention is not limitedby the shape, configuration, placement, etc. of the structural elements.

In the following descriptions, the structural elements havingsubstantially the same function and configuration are denoted by thesame numeral or sign. The number subsequent to a letter or letters in areference sign is used to distinguish structural elements referred to byreference signs including the same letter or letters and having the sameconfiguration. If the structural elements denoted by the reference signsincluding the same letter or letters need not be distinguished from eachother, they include only the same letter or letters and not a numbersubsequent thereto.

[1] Embodiment

Below are descriptions of a semiconductor memory 1 according to anembodiment.

[1-1] Configuration of Semiconductor Memory 1

[1-1-1] Overall Configuration of Semiconductor Memory 1

The semiconductor memory 1 is, for example, a NAND flash memory capableof storing data nonvolatilely. The semiconductor memory 1 is controlledby, for example, an external memory controller 2. FIG. 1 shows anexample of a configuration of the semiconductor memory 1 according tothe embodiment.

As shown in FIG. 1, the semiconductor memory 1 includes, for example, amemory cell array 10, a command register 11, an address register 12, asequencer 13, a driver module 14, a row decoder module 15 and a senseamplifier module 16.

The memory cell array 10 includes a plurality of blocks BLK0 to BLKn (nis an integer of 1 or more). The block BLK is a set of memory cellscapable of storing data nonvolatilely and is used as, for example, aunit of data erase.

The memory cell array 10 also includes a plurality of bit lines and aplurality of word lines. Each memory cell of the memory cell array 10 isassociated with, for example, its corresponding one of the bit lines andits corresponding one of the word lines. The configuration of the memorycell array 10 will be described in detail later.

The command register 11 holds a command CMD which the semiconductormemory 1 has received from the memory controller 2. The command CMDincludes, for example, instructions to cause the sequencer 13 to performa read operation, a write operation, an erase operation and the like.

The address register 12 holds address information ADD which thesemiconductor memory 1 has received from the memory controller 2. Theaddress information ADD includes a block address BAd, a page addressPAd, a column address CAd and the like. For example, the block addressBAd, page address PAd and column address CAd are used to select a blockBLK, a word line and a bit line, respectively.

The sequencer 13 controls the operation of the entire semiconductormemory 1. For example, the sequencer 13 controls the driver module 14,the row decoder module 15, the sense amplifier module 16 and the likebased on the command CMD held in the command register 11 to perform aread operation, a write operation, an erase operation and the like.

The driver module 14 generates a voltage to be used in the readoperation, write operation, erase operation and the like. Then, thedriver module 14 applies the generated voltage to a signal linecorresponding to a selected word line, for example, based on the pageaddress PAd held in the address register 12.

The row decoder module 15 selects one block BLK in the memory cell array10, based on the block address BAd held in the address register 12.Then, the row decoder module 15 transfers, for example, a voltageapplied to the signal line corresponding to the selected word line, tothe selected word line in the selected block BLK.

In the write operation, the sense amplifier module 16 apples a desiredvoltage to each bit line in accordance with write data DAT received fromthe memory controller 2. In the read operation, the sense amplifiermodule 16 determines data stored in a memory cell based on the voltageof the bit line, and transfers a result of the determination to thememory controller 2 as read data DAT.

Communications between the semiconductor memory 1 and the memorycontroller 2 supports, for example, the NAND interface standard. In thecommunications, for example, a command latch enable signal CLE, anaddress latch enable signal ALE, a write enable signal WEn, a readenable signal REn, a ready busy signal RBn and an input/output signalI/O are used.

The command latch enable signal CLE is a signal indicating that theinput/output signal I/O received by the semiconductor memory 1 is thecommand CMD. The address latch enable signal ALE is a signal indicatingthat the signal I/O received by the semiconductor memory 1 is theaddress information ADD. The write enable signal WEn is a signal toinstruct the semiconductor memory 1 to receive the input/output signalI/O. The read enable signal REn is a signal to instruct thesemiconductor memory 1 to output the input/output signal I/O.

The ready busy signal RBn is a signal to notify the memory controller 2whether the semiconductor memory 1 is in a ready state to accept theinstruction from the memory controller 2 or in a busy state not toaccept the instruction. The input/output signal I/O is, for example, an8-bit wide signal and may include a command CMD, address informationADD, data DAT and the like.

The semiconductor memory 1 and the memory controller 2 described abovemay be combined to compose one semiconductor device. As thissemiconductor device, there are a memory card such as SD™ card, asolid-state drive (SSD) and the like.

[1-1-2] Circuit Configuration of Memory Cell Array 10

FIG. 2 shows an example of a circuit configuration of the memory cellarray 10 included in the semiconductor memory 1 according to theembodiment, extracting one of the blocks BLK included in the memory cellarray 10.

As shown in FIG. 2, the block BLK includes, for example, four stringunits SU0 to SU3. Each string unit SU includes a plurality of NANDstrings NS.

The NAND strings NS are associated with their respective bit lines BL0to BLm (m is an integer of one or more). Each NAND string NS includes,for example, memory cell transistors MT0 to MT11 and select transistorsST1 and ST2.

Each memory cell transistor MT includes a control gate and a chargeaccumulation layer and holds data nonvolatilely. Each of the selecttransistors ST1 and ST2 is used to select the string unit SU duringvarious operations.

In each NAND string NS, the memory cell transistors MT0 to MT11 areconnected in series between the select transistors ST1 and ST2. In thesame block BLK, the control gates of the memory cell transistors MT0 toMT11 are commonly connected to word lines WL0 to WL11, respectively.

In each NAND string NS, the drain of a select transistor ST1 isconnected to its associated bit line BL and the source thereof isconnected to one end of each of the series-connected memory celltransistors MT0 to MT11. In the same block BLK, the gates of the selecttransistors ST1 in the string units SU0 to SU3 are commonly connected toselect gate lines SGD0 to SGD3, respectively.

In each NAND string NS, the drain of a select transistor ST2 isconnected to the other end of each of the series-connected memory celltransistors MT0 to MT11. In the same block BLK, the sources of theselect transistors ST2 are commonly connected to a source line SL andthe gates thereof are commonly connected to a select gate line SGS.

In the circuit configuration of the memory cell array 10 describedabove, each bit line BL is connected to, for example, the NAND stringsNS corresponding to each block BLK. The source line SL is connected to,for example, the blocks BLK.

A set of memory cell transistors MT connected to a common word line WLin one string unit SU is referred to as, for example, a cell unit CU.For example, the storage capacity of the cell unit CU including memorycell transistors MT each storing one-bit data is defined as “one-pagedata.” The cell unit CU may have a storage capacity of data of two ormore pages, according to the number of bits of data to be stored in thememory cell transistor MT.

Note that the circuit configuration of the memory cell array 10 includedin the semiconductor memory 1 according to the embodiment is not limitedto the configuration described above. For example, the number of memorycell transistors MT and the number of select transistors ST1 and ST2,which are included in each NAND string NS, can optionally be set. Thenumber of string units SU included in each block BLK can optionally beset.

[1-1-3] Configuration of Memory Cell Array 10

An example of the configuration of the semiconductor memory 1 accordingto the embodiment will be described below.

In the figures referred to below, the X direction corresponds to theextending direction of the word line WL, the Y direction corresponds tothe extending direction of the bit line BL, and the Z directioncorresponds to a direction perpendicular to the surface of thesemiconductor substrate 20 on which the semiconductor memory 1 isformed.

In the sectional views referred to below, structural elements such as aninsulating layer (an interlayer insulating film), interconnect andcontacts will be omitted as appropriate for clarification. Furthermore,hatching is added to the plan views as appropriate for clarification.The hatching attached to the plan views is not necessarily related tothe materials or properties of the structural elements to which hatchingis added.

(Planar Layout of Memory Cell Array 10)

FIG. 3 shows an example of a planar layout of the memory cell array 10in the semiconductor memory 1 according to the embodiment.

As shown in FIG. 3, the memory cell array 10 includes, for example,block groups BLKG0 to BLKG3. Each block group BLKG includes a pluralityof blocks BLK. Each block group BLKG is provided to extend along the Xdirection, and the block groups BLKG0 to BLKG3 are arranged in the Ydirection.

The region of the block group BLKG can be divided into, for example, acell area CA and hookup areas HA1 and HA2. For example, the hookup areasHA1 and HA2 are arranged in an end portion of the block group BLKG andthe other end portion thereof, respectively in the X direction. The cellarea CA is placed between the hookup areas HA1 and HA2.

The cell area CA is an area in which a plurality of NAND strings NS areformed. Each of the hookup areas HA1 and HA2 is an area in which acontact for electrically connecting the select gate lined SGD and SGSand word lines WL, which are connected to the NAND string NS, and therow decoder module 15 is formed.

In the cell area CA, for example, a BL connection area BLtap is providedbetween adjacent block groups BLKG. The BL connection area BLtap is, forexample, an area in which a contact for electrically connecting a bitline BL connected to the NAND string NS and the sense amplifier module16 disposed under the memory cell array 10 is formed.

FIG. 4 shows an example of a more detailed planar layout of the memorycell array 10 included in the semiconductor memory 1 according to theembodiment, extracting one of the block groups BLKG.

As shown in FIG. 4, for example, the block group BLKG includes fouractive blocks ABLK1 to ABLK4 and four dummy blocks DBLK1 to DBLK4. Theregion in which the block group BLKG is provided includes, for example,a plurality of slits SLT, SLTa and SLTb.

The active blocks ABLK are blocks BLK that are used for storage of data.The total number of active blocks ABLK included in the memory cell array10 corresponds to that of blocks BLK included in the memory cell array10.

The dummy blocks DBLK are blocks BLK that are not used for storage ofdata. The dummy blocks DBLK are provided to ensure the shapes of theslit SLT and memory pillar MP, which will be described later.

The active blocks ABLK and the dummy blocks DBLK extend along the Xdirection. The four active blocks ABLK are arranged in the Y direction,and are placed between the dummy blocks DBLK.

Specifically, for example, the dummy blocks DBLK1 and DBLK2, activeblocks ABLK1 to ABLK4, dummy blocks DBLK3 and DBLK4 are arranged inorder along the Y direction.

Note that the active blocks ABLK and dummy blocks DBLK can be arrangedoptionally in the block group BLKG if the block provided at either endof the block group at least in the Y direction has only to be a dummyblock DBLK.

The slits SLT are provided to extend from the hookup area HA1 to thehookup area HA2 along the X direction and are arranged in the Ydirection. Between adjacent slits SLT, for example, one slit SLTa andtwo slits SLTb are arranged.

For example, between adjacent slits SLT, the slit SLTa and SLTb areprovided to extend along the X direction. The two slits SLTb arearranged in their respective hookup areas HA1 and HA2. The slit SLTa isdisposed between the slit SLTb in the hookup area HA1 and the slit SLTbin the hookup area HA2.

In other words, between adjacent slits SLT, for example, a transverseslit extending in the X direction and including a slit dividing sectionDJ is provided. The transverse slit is divided by the slit dividingsection DJ in each of the hookup areas HA1 and HA2. Of the dividedtransverse slits, a slit portion extending from the hookup area HA1 tothe hookup area HA2 corresponds to the slit SLTa, and a slit portionprovided in each of the hookup areas HA1 and HA2 corresponds to the slitSLTb.

The configuration between adjacent slits SLT described above correspondsto, for example, one active block ABLK or one dummy block DBLK.

Note that the number of block groups BLKG included in the memory cellarray 10 can optionally be set. The number of active blocks ABLKincluded in each block group BLKG and the number of dummy blocks DBLKincluded therein may be the same or different.

The arrangement of the slits SLTa and that of the slits SLTb may be thesame or different between the active block ABLK and the dummy blockDBLK. The number of slits SLTa and SLTb arranged between the slits SLTcan optionally be set. The slit dividing portion DJ can be omittedbetween the slits SLT.

(Configuration of Memory Cell Array 10 in Cell Area CA)

FIG. 5 shows an example of a planar layout in the cell area CA of thememory cell array 10 included in the semiconductor memory 1 according tothe embodiment, extracting one active block ABLK and one dummy blockDBLK.

As shown in FIG. 5, the cell area CA of the memory cell array 10includes a plurality of memory pillars MP. Between the slit SLT and theslit SLTa, for example a slit SHE is provided.

Between the slit SLT and the slit SHE, the memory pillars MP arearranged, for example, in a staggered manner. Similarly, between theslit SLTa and the slit SHE, the memory pillars MP are arranged, forexample, in a staggered manner. The memory pillars MP function as, forexample, one NAND string.

For example, in the active block ABLK, a set of memory pillars MPprovided between the slit SLT and the slit SHE corresponds to one stringunit SU. Similarly, a set of memory pillars MP provided between the slitSLTa and the slit SHE corresponds to one string unit SU.

Thus, in the active block ABLK, the string unit SU is provided to extendalong the X direction, and the string units SU0 to SU3 are arranged inthe Y direction. The planar layout of the dummy block DBLK in the cellarea CA may be the same as or different from that of the active blockABLK.

FIG. 6 shows an example of a more detailed planar layout in the cellarea CA of the memory cell array 10 included in the semiconductor memory1 according to the embodiment, extracting the string units SU0 and SU1of the active block ABLK.

As shown in FIG. 6, the cell area CA of the memory cell array 10 mayalso include a plurality of dummy pillars DMP. The dummy pillars DMP,for example, have a configuration similar to that of the memory pillarsMP and are not used for storage of data. The dummy pillars DMP are, forexample, arranged to overlap the slits SHE.

In the cell area CA, a plurality of bit lines BL and a plurality ofcontacts CV are arranged to correspond to the memory pillars MP.

Specifically, the bit lines BL extend in the Y direction and arearranged in the X direction. Each of the bit lines BL is placed tooverlap at least one memory pillar MP for each string unit SU. Forexample, two bit lines BL overlap each memory pillar MP.

Each contact CV is disposed between one of the bit lines BL overlappinga memory pillar MP and the memory pillar MP. Each memory pillar MP iselectrically connected to its corresponding bit line BL via the contactCV.

Note that the number of string units SU provided between adjacent slitsSLT can optionally be set. The number of memory pillars MP shown is onlyan example, as is the arrangement thereof. The number and arrangement ofmemory pillars MP can optionally be set. The number of bit lines BLoverlapping each memory pillar MP can optionally be set.

FIG. 7 is a sectional view of the memory cell array 10 taken along lineVII-VII of FIG. 6, showing an example of a sectional configuration ofthe active block ABLK in the cell area CA.

As shown in FIG. 7, an area corresponding to the active block ABLK inthe cell area CA includes, for example, conductors 21 to 25, memorypillars MP, a dummy pillar DMP, contacts CV and slits SLT, SLTa and SHE.

The conductor 21 is provided above the semiconductor substrate 20 withan insulating layer between them. Though not shown, for example, acircuit such as the row decoder module 15 and the sense amplifier module16 is provided in the insulating layer between the semiconductorsubstrate 20 and the conductor 21.

The conductor 21 is shaped like a plate that expands, for example, alongthe XY plane and used as a source line SL. The conductor 21 is, forexample, phosphorus-doped polysilicon (Si).

The conductor 22 is provided above the conductor 21 with an insulatinglayer therebetween. The conductor 22 is shaped like a plate thatexpands, for example, along the XY plane and used as a select gate lineSGS. The conductor 22 is, for example, phosphorus-doped polysilicon(Si).

The insulating layers and the conductors 23 are stacked alternatelyabove the conductor 22. The conductors 23 are each shaped like a platethat expands, for example, along the XY plane. For example, the stackedconductors 23 are used as their respective word lines WL0 to WL11 inorder from the semiconductor substrate 20. The conductors 23 include,for example, tungsten (W).

The conductor 24 is provided above the conductor 23 with an insulatinglayer therebetween. The conductor 24 is shaped like a plate thatexpands, for example, along the XY plane and used as a select gate lineSGD. The conductor 24 includes, for example, tungsten (W).

The conductor 25 is provided above the conductor 24 with an insulatinglayer therebetween. The conductor 25 is shaped like a line that extends,for example, along the Y direction and used as a bit line BL. That is, aplurality of conductors 25 are arranged in the X direction in an areanot shown. The conductors 25 include, for example, copper (Cu).

The memory pillars MP are each shaped like a column that extends alongthe Z direction and penetrate, for example, the conductors 22 to 24. Forexample, the upper ends of the memory pillars MP are included between alayer provided with the conductor 24 and a layer provided with theconductor 25. The lower ends of the memory pillars MP are included in,for example, a layer provided with the conductor 21, and is in contactwith the conductor 21.

The memory pillars MP each include, for example, a core member 30, asemiconductor 31 and a stacked film 32. The core member 30 is shapedlike a column that extends along the Z direction. The upper end of thecore member 30 is included in, for example, a layer that is higher thanthe layer in which the conductor 24 is provided. The lower end of thecore member 30 is included in, for example, the layer in which theconductor 21 is provided. The core member 30 includes, for example, aninsulator such as silicon oxide (SiO₂).

The core member 30 is covered with the semiconductor 31. Thesemiconductor 31 is in contact with the conductor 21 through the sidesurfaces of the memory pillar MP. The semiconductor 31 is, for example,polysilicon (Si). The stacked film 32 covers the side surfaces andundersurface of the semiconductor 31, excluding a portion where theconductor 21 and the semiconductor 31 are in contact with each other.The columnar contact CV is provided on the semiconductor 31. Oneconductor 25, i.e. one bit line BL is in contact with the top surface ofthe contact CV.

The dummy pillar DMP is shaped like a column that extends along the Zdirection and penetrates, for example, the conductors 22 to 24. Thedetailed configuration of the dummy pillar DMP is similar to that of,e.g. the memory pillar MP. For example, no contacts CV are connected tothe dummy pillar DMP.

The slit SLT is shaped like a plate that expands, for example, along theXZ plane and divide the conductors 22 to 24. For example, the upper endof the slit SLT is included in a layer between the layer including theupper end of the memory pillar MP and the layer provided with theconductor 25. The lower end of the slit SLT is included in, for example,the layer provided with the conductor 21. The slit SLT include, forexample, an insulator such as silicon oxide (SiO₂). The configuration ofthe slit SLTa is similar to that of, e.g. the slit SLT.

The slit SHE is provided to extend in, for example, the X direction anddivide the conductor 24. The slit SHE may divide part of the dummypillar DMP. For example, the upper end of the slit SHE is included in alayer between the layer including the upper end of the memory pillar MPand the layer provided with the conductor 25. The lower end of the slitSHE is included in, for example, a layer between the uppermostconductors 23 and 24. The slit SHE includes an insulator such as siliconoxide (SiO₂). The slit SHE extending in the X direction may be dividedby the dummy pillar DMP in a position where the slit SHE overlaps thedummy pillar DMP.

FIG. 8 shows an example of a sectional configuration of the memorypillar MP including the conductor 23, which is parallel to the surfaceof the semiconductor substrate 20.

As shown in FIG. 8, the core member 30 is provided in the central partof the memory pillar MP in the layer including the conductor 23. Thesemiconductor 31 surrounds the side of the core member 30. The stackedfilm 32 surrounds the side of the semiconductor 31. The stacked film 32includes, for example, a tunnel oxide film 33, an insulating film 34 anda block insulating film 35.

The tunnel oxide film 33 surrounds the side of the semiconductor 31. Theinsulating film 34 surrounds the side of the tunnel oxide film 33. Theblock insulating film 35 surrounds the side of the insulating film 34.The conductor 23 surrounds the side of the block insulating film 35.

In the configuration of the memory pillar MP described above, forexample, a portion at which the memory pillar MP and the conductor 22intersect functions as the select transistor ST2. A portion at which thememory pillar MP and the conductor 23 intersect functions as the memorycell transistor MT. A portion at which the memory pillar MP and theconductor 24 intersect functions as the select transistor ST1.

That is, the semiconductor 31 in the memory pillar MP functions as achannel of each of the memory cell transistor MT and select transistorsST1 and ST2. The insulating film 34 in the memory pillar MP functions asa charge accumulation layer of the memory cell transistor MT.

FIG. 9 is a sectional view of the memory cell array 10 according to theembodiment, showing an example of a sectional configuration of the dummyblock DBLK in the cell area CA.

As shown in FIG. 9, an area corresponding to the dummy block DBLK in thecell area CA includes, for example, conductors 21 to 25, memory pillarsMP, a dummy pillar DMP and slits SLT, SLTa and SHE. The configuration ofthe dummy block DBLK is similar to, for example, the configuration inwhich the contacts CV are excluded from the active block ABLK.

Preferably, the dummy block DBLK in the cell area CA is, for example,configured not to include contacts CV, but it may include them. That is,in the dummy block DBLK, the memory pillars MP and the conductor 25 mayelectrically be connected together or not.

Note that in the active block ABLK, the memory pillars MP and theconductor 25 may electrically be connected via two or more contacts orvia other interconnect. In this case, the dummy block DBLK may beconfigured to form contacts and interconnect between the memory pillarsMP and the conductor 25 like the active block ABLK or it may have theconfiguration in which part of the contacts and interconnect is excludedfrom the active block ABLK.

(Configuration of Memory Cell Array 10 in Hookup Area HA)

FIG. 10 shows an example of a planar layout in the hookup area HA1 ofthe memory cell array 10 included in the semiconductor memory 1according to the embodiment, extracting the active blocks ABLK1 andABLK2. First, the planar layout of the active block ABLK1 in the hookuparea HA1 will be described.

As shown in FIG. 10, the select gate line SGD (conductor 24) is dividedinto four select gate lines SGD by the slits SLT, SLTa and SHE in anarea corresponding to the active block ABLK1 in the hookup area HA1. Thefour select gate lines SGD correspond to their respective string unitsSU0 to SU3.

The word lines WL0 to WL11 (conductors 23) have a portion (terracedportion) that does not overlap the upper conductor. For example, theconductors 23, which correspond to their respective word lines WL0 toWL11, are arranged stepwise in three lines with two steps in the Ydirection and multiple steps in the X direction.

The slit dividing section DJ is placed in, for example, the terracedportion of the word line WL11. The word lines WL provided in the samelayer in the same active block ABLK are shorted-circuited through theslit dividing section DJ. The slit SLTb is, for example, placed todivide the terraced portions of, e.g. the word lines WL1, WL4, WL7 andWL10.

The select gate line SGS (conductor 22) is, for example, drawn in the Xdirection from the end portions of the word lines WL0 to WL2. The slitSLTb may divide the select gate line SGS or not. The select gate lineSGS provided in each of adjacent active blocks ABLk is divided by theslit SLT.

Furthermore, in the area corresponding to the active block ABLK1, forexample, a contact CC is provided in the terraced portion of each of theselect gate line SGS, word lines WL0 to WL11 and select gate line SGD.

The select gate line SGS, word lines WL0 to WL11 and select gate lineSGD in the active block ABLK1 are electrically connected to the rowdecoder module 15 via the contacts CC provided in the hookup area HA1.

The planar layout of the active block ABLK2 in the hookup area HA1 issimilar to, for example, the planer layout of the active block ABLK1,which is reversed symmetrically with regard to the X direction and fromwhich the contacts CC are excluded.

In this case, too, the select gate line SGS, word lines WL0 to WL11 andselect gate line SGD in the active block ABLK2 are electricallyconnected to the row decoder module 15 via the contacts CC provided inthe hookup area HA2.

Specifically, the planar layout of the active blocks ABLK1 and ABLK2 inthe hookup area HA2 is similar to, for example, the planar layout of theactive block ABLK1 and ABLK2 in the hookup area HA1, which is reversedsymmetrically with regard to the Y direction and in which the contactsCC are provided to correspond to the interconnect in the active blockABLK2.

FIG. 11 is a sectional view of the memory cell array 10 taken along lineXI-XI of FIG. 10 and FIG. 12 is a sectional view of the memory cellarray 10 taken along line XII-XII of FIG. 10. FIGS. 11 and 12 each showan example of a sectional configuration of the active block ABLK in thehookup area HA.

As shown in FIG. 11, the area corresponding to the active block ABLK1 inthe hookup area HA1 includes, for example, conductors 21 to 24, 40 and41 and contacts CC and V1. In FIG. 11, the placement of the slit SHE inthe depth direction of the sectional view is shown by the broken line.

In the hookup area HA1, one end of the conductor 21 corresponding to thesource line SL is provided more inside than, for example, the conductor22. The conductor 21 has only to be provided at least in the cell areaCA. The conductor 22, conductors 23 and conductor 24, which correspondto the select gate line SGS, word lines WL and select gate line SGD,respectively, each have an end portion that does not overlap theconductor 23 provided at least in the upper layer or the conductor 24.The slit SHE is provided to divide the conductive 24 corresponding tothe select gate line SGD.

Each contact CC is formed like a column extending along the Z direction.The contact CC includes, for example, a conductor shaped like a column.The conductor may have a spacer on its side. For example, the conductorcontains tungsten (W) and the spacer contains silicon oxide (SiO₂).

Each of the conductors 40 and 41 is interconnect for connecting the rowdecoder module 15 and conductors 22 to 24 drawn from the cell area CA tothe hookup area HA1. A plurality of conductors 40 are provided on theirrespective contacts CC. A plurality of contacts V1 are provided on theirrespective conductors 40. A plurality of conductors 41 are provided ontheir respective contacts V1. The conductors 40 and 41 may be connectedvia a plurality of contacts, and different interconnects are connectedbetween the contacts.

As shown in FIG. 12, the configuration of the conductor 23 in the activeblock ABLK2 is similar to, for example, the configuration of theconductor 23 in the active block ABLK1, which is reversed symmetricallywith regard to the slit SLT between the active blocks ABLK1 and ABLK2.

In other words, the direction in which the number of steps of the wordlines WL (conductors 23) formed along the Y direction in the activeblock ABLK1 increases is opposite to the direction in which the numberof steps of the word lines WL (conductors 23) formed along the Ydirection in the active block ABLK2 increases.

Specifically, for example, the terraced portion of the word line WL4 ofeach of the active blocks ABLK1 and ABLK2 is disposed between theterraced portions of the word lines WL3 of the active blocks ABLK1 andABLK2. The terraced portion of the word line WL5 of each of the activeblocks ABLK1 and ABLK2 is disposed between the terraced portions of theword lines WL4 of the active blocks ABLK1 and ABLK2.

In the configuration of the active block ABLK1 in the hookup area HA1described above, the interconnect drawn via the contact CC is, forexample, electrically connected to the circuit under the memory cellarray 10 through the interconnect of the dummy block DBLK in the hookuparea HA1.

The interconnect drawn via the contact CC may be electrically connectedto the circuit under the memory cell array 10, for example, through thearea outside the hookup area HA1 or through the contact that penetratesa wide terraced portion provided in the active block ABLK in the hookuparea HA1.

FIG. 13 shows an example of a planar layout in the hookup area HA1 ofthe memory cell array 10 included in the semiconductor memory 1according to the embodiment, extracting the dummy blocks DBLK1 andDBLK2.

As shown in FIG. 13, the planar layout of the area corresponding to thedummy blocks DBLK1 and DBLK2 in the hookup area HA1 is similar to, forexample, the planar layout of the area corresponding to the activeblocks ABLK1 and ABLK2 described with reference to FIG. 10, and they aredifferent in the type of contacts to be provided.

Specifically, the dummy block DBLK1 is provided with a contact CCL inplace of the contact CC provided in the active block ABLK1. The contactsCC and CCL are made of the same material, and the outside diameter ofthe contact CCL is larger than that of the contact CC.

The “outside diameter” used in this specification is compared by, forexample, a section which is parallel to the surface of the semiconductorsubstrate 20 and includes the same layer. The “outside diameter of thecontact” may be compared by the outside diameter of the conductor in thecontact or by the outside diameter of the spacer.

In the embodiment, the contact CCL can be disposed so as not to includea step portion formed by, for example, adjacent word lines WL. Theplanar layout of the dummy blocks DBLK1 and DBLK2 in the hookup area HA2can be designed in a manner similar to, for example, the planar layoutof the dummy blocks DBLK1 and DBLK2 in the hookup area HA1, which isreversed symmetrically with regard to the Y direction. At least onecontact CCL has only to be provided in the hookup areas HA1 and HA2.

FIG. 14 is a sectional view of the memory cell array 10 taken along lineXIV-XIV of FIG. 13 and FIG. 15 is a sectional view of the memory cellarray 10 taken along line XV-XV of FIG. 13. FIGS. 14 and 15 each show anexample of a sectional configuration of the dummy block DBLK in thehookup area HA.

As shown in FIGS. 14 and 15, the configuration of an area correspondingto the dummy blocks DBLK1 and DBLK2 in the hookup area HA1 differs from,for example, the configuration of the area corresponding to the activeblocks ABLK1 and ABLK2 described with reference to FIGS. 11 and 12 inthe type of contacts to be provided and in that some of the contacts andinterconnects are excluded.

Specifically, in the dummy block DBLK, the contacts CC are replaced withcontacts CCL and the contacts V1 and conductors 40 and 41 are excluded.The other configurations in the dummy block DBLK are similar to, forexample, the configuration of the active block ABLK and thus theirdescriptions will be omitted.

Note that the dummy block DBLK may have an interconnect configurationincluding the contacts V1, conductors 40 and 41 and the like. Thecontacts CCL may electrically be connected to the circuit under thememory cell array 10 or not.

In the configuration of the memory cell array 10 described above, thenumber of conductors 23 is designed based on the number of word linesWL. A plurality of conductors 22 provided as a plurality of layers maybe allocated to the select gate line SGS. When the select gate line SGSis formed as a plurality of layers, conductors other than the conductors22 can be used. A plurality of conductors 24 provided as a plurality oflayers may be allocated to the select gate line SGD.

For example, the dummy blocks DBLK disposed at both ends of a blockgroup BLKG in the Y direction are each adjacent to a dummy staircase.The dummy staircase is formed by, for example, end portions of theconductors 22 to 24 and corresponds to a staircase configurationincluding a terraced portion in which the lower-layer conductor does notoverlap the upper-layer conductor and to which no contact is connected.In the area of the dummy staircase, some of the conductors 22 to 24 maybe replaced with different materials.

[1-2] Method of Manufacturing Semiconductor Memory 1

FIG. 16 is a flowchart showing an example of a method of manufacturingthe semiconductor memory 1 according to the embodiment. Of themanufacturing processes of the semiconductor memory 1, a process offorming the memory cell array 10 through a process of forming thecontacts CC will be described as appropriate with reference to FIG. 16.

First, a configuration corresponding to the memory cell array 10 isformed (step S10).

FIG. 17 shows an example of a sectional configuration of the activeblock ABLK1 in step S10. As shown in FIG. 17, in step S10, aconfiguration of stacked interconnect corresponding to the conductors 21to 24 is formed. Further, a plurality of memory pillars MP are formed inthe cell area CA, and a staircase configuration of the word lines WL andthe like is formed in the hookup area HA1. In the configuration of thestacked interconnect, for example, insulating layers and sacrificialmembers are alternately stacked and then the sacrificial members aresubjected to a replacement process using the slits SLT, SLTa and SLTb,with the result that conductors 21 to 24 can be formed.

Though not shown, for example, a circuit such as the row decoder module15 and the sense amplifier module 16 is formed in an area between theconductor 21 and the semiconductor substrate 20 or between the conductor22 and the semiconductor substrate 20. The configuration of the memorycell array 10 in the hookup area HA2 is similar to that of, for example,the memory cell array 10 in the hookup area HA1.

Next, contact holes CH and CHL are formed (step S11).

FIG. 18 shows an example of a planar layout of the hookup area HA1 instep S11. FIGS. 19 and 20 respectively show an example of the sectionalconfiguration of the active block ABLK1 and an example of the sectionalconfiguration of the dummy block DBLK1 in step S11.

As shown in FIG. 18, in step S11, the contact holes CH are formed tocorrespond to an area where the contacts CC are provided in the activeblock ABLK1, and the contact holes CHL are formed to correspond to anarea where the contacts CCL are provided in the dummy block DBLK1.

Specifically, in step S11, first, a mask is formed by photolithographyor the like to have opened areas for the contact holes CH and CHL. Then,anisotropic etching is performed using the formed mask to form thecontact holes CH and CHL. Thus, the contact holes CH and CHL, areformed, for example, at once in the same process.

As shown in FIG. 19, in the hookup area HA1, the contact holes CH areeach formed so as to expose, for example, the surface of thecorresponding conductor 23. Specifically, in the active block ABLK, forexample, the contact hole CH corresponding to the word line WL0 isformed so as to expose the surface of the conductor 23 corresponding tothe word line WL0.

Similarly, the contact holes CH corresponding to the word lines WL3, WL6and WL9 are formed so as to expose their respective surfaces of theconductors 23 corresponding to the word lines WL3, WL6, and WL9.Similarly, the contact holes not shown are formed so as to expose thesurfaces of the corresponding conductors.

As shown in FIG. 20, in the hookup area HA1, the contact holes CHL areeach formed so as to expose, for example, the surface of thecorresponding conductor 23. Specifically, in the dummy block DBLK, forexample, the contact hole CHL corresponding to the word line WL0 isformed so as to expose the surface of the conductor 23 corresponding tothe word line WL0.

Similarly, the contact holes CHL corresponding to the word lines WL3,WL6 and WL9 are formed so as to expose their respective surfaces of theconductors 23 corresponding to the word lines WL3, WL6, and WL9.Similarly, the contact holes not shown are formed so as to expose thesurfaces of the corresponding conductors.

The inside diameter of the contact hole CHL formed in step S11 isgreater than that of the contact hole CH. In this specification, the“inside diameter” is compared by the section which is parallel to thesurface of the semiconductor substrate 20 and which includes the samelayer. That is, the “inside diameter of the contact hole” is comparedby, for example, the inside diameter of the contact hole in the sectionwhich is parallel to the surface of the semiconductor substrate 20 andwhich includes the same layer.

The amount of overlay shift will be measured below (step S12).

Specifically, the dimensions of the bottom of the contact hole CHL ismeasured using, e.g. a scanning electron microscope (SEM). Then, basedon the result of the measurement, the amount of overlay shift of, e.g.the contact holes CH and CHL is calculated.

An example of a method for measuring the dimensions of the bottom of thecontact hole CHL in step S12 will be described below with reference toFIG. 21. FIG. 21 shows a contact hole CHL corresponding to the word lineWL4 of the dummy block DBLK, terraced portions of the word lines WL1,WL2, WL5, WL7 and WL8, and a slit SLTb.

As shown in FIG. 21, in step S12, for example, an interval between thecentral point of the contact hole CHL and a pattern to be detected firsttoward the inner peripheral portion of the contact hole CHL from thecentral point is measured.

Specifically, for example, an interval XP between the central point anda pattern to be detected first toward the positive direction in the Xdirection from the central point, an interval XM between the centralpoint and a pattern to be detected first toward the negative directionin the X direction from the central point, an interval YP between thecentral point and a pattern to be detected first toward the positivedirection in the Y direction from the central point, and an interval YMbetween the central point and a pattern to be detected first toward thenegative direction in the Y direction from the central point aremeasured.

When a boundary BD1 between the word lines WL1 and WL4 is included inthe area of the contact hole CHL, an interval in the X direction betweenthe central point and the boundary BD1 is measured as the interval XM.When a boundary BD2 between the word lines WL4 and WL5 is included inthe area of the contact hole CHL, an interval in the Y direction betweenthe central point and the boundary BD2 is measured as the interval YM.

When a boundary BD3 between the word lines WL4 and WL7 is included inthe area of the contact hole CHL, an interval in the X direction betweenthe central point and the boundary BD3 is measured as the interval XP.When a boundary BD4 between the word line WL4 and the slit SLTb isincluded in the area of the contact hole CHL, an interval in the Ydirection between the central point and the boundary BD4 is measured asthe interval YP.

If no boundary BD is included in the area of the contact hole CHL, aninterval from the central point of the contact hole CHL to the innerperipheral portion thereof is measured as each of the intervals XP, XM,YP and YM.

The fact that each of the intervals XP, XM, YP and YM is a numericalvalue close to the distance between the central point of the contacthole CHL and the inner peripheral portion thereof, namely, the radius ofthe contact hole CHL implies that no overlay is shifted or overlay isshifted slightly in this process.

On the other hand, when the amount of overlay shift is large, the memorycell array 10 may have a planar layout as shown in FIG. 22. FIG. 22shows an example of a planar layout of the memory cell array 10. Thisplanar layout differs from that of the memory cell array 10 shown inFIG. 18 in the arrangement of contact holes CH and CHL.

When the amount of overlay shift of the contact holes CH and CHL islarge as shown in FIG. 22, a boundary between adjacent terraced portionsmay be included in the opening of the contact hole CHL. In this example,the boundaries BD1 and BD2 are included in the opening of the contacthole CHL.

FIG. 23 shows a sectional configuration of the memory cell array 10 whenthe amount of overlay shift of the contact holes CH and CHL is large.FIG. 23 also shows an example of a sectional configuration of a dummyblock DBLK corresponding to the planar layout of the memory cell array10 shown in FIG. 22.

When the amount of overlay shift of the contact holes CH and CHL islarge as shown in FIG. 23, the contact hole CHL in the dummy block DBLKcan be opened to an unintended interconnect layer.

Specifically, for example, the contact hole CHL corresponding to theword line WL9 is formed to expose not only the terraced portion of theconductor 23 corresponding to the word line WL9, but also the terracedportion of the conductor 23 corresponding to the word line WL6 and theside surface portions of two conductors 23 corresponding to the wordlines WL7 and WL8.

Similarly, the contact hole CHL corresponding to the word line WL6 isformed to expose not only the terraced portion of the conductor 23corresponding to the word line WL6, but also the terraced portion of theconductor 23 corresponding to the word line WL3 and the side surfaceportions of two conductors 23 corresponding to the word lines WL4 andWLS.

The contact hole CHL corresponding to the word line WL3 is formed toexpose not only the terraced portion of the conductor 23 correspondingto the word line WL3, but also the terraced portion of the conductor 23corresponding to the word line WL0 and the side surface portions of twoconductors 23 corresponding to the word lines WL1 and WL2.

When a contact hole (not shown) in the dummy block BLK includes aboundary between adjacent terraced portions, a configuration in whichthe terraced portions and side surfaces of the conductors 23 are exposedcan be formed.

FIG. 24 shows an example of a method of measuring an amount of overlayshift of the contact holes CH and CHL when the amount of overlay shiftis large. FIG. 24 shows an area similar to that shown in FIG. 21, andthe area of FIG. 24 differs from that shown in FIG. 21 in the positionof the contact hole CHL.

When the amount of overlay shift of the contact hole CHL as shown inFIG. 24 is large, for example, intervals XM and YM are values based onthe boundaries BD1 and BD2, respectively. That is, in this example, theintervals XM and YM are values that are respectively smaller than theintervals XM and YM described with reference to FIG. 21.

For example, when the interval XM is shorter than the radius of thecontact hole CHL, the overlay of the contact hole CHL is shifted in thenegative direction in the X direction. Similarly, when the interval XPis shorter than the radius of the contact hole CHL, the overlay of thecontact hole CHL is shifted in the positive direction in the Xdirection.

When the interval YM is shorter than the radius of the contact hole CHL,the overlay of the contact hole CHL is shifted in the negative directionin the Y direction. When the interval YP is shorter than the radius ofthe contact hole CHL, the overlay of the contact hole CHL is shifted inthe positive direction in the Y direction.

Then, in the method of manufacturing the semiconductor memory 1according to the embodiment, for example, an ideal interval between theboundary between adjacent terraced portions and the central position ofthe contact hole CHL is compared with each of the measured intervals XM,XP, YM and YP. As a result, the amount of overlay shift of the formedcontact hole CHL can be calculated.

The calculated amount of overlay shift may be fed back as a correctionvalue of parameters used when, for example, the subsequent wafer (lot)is processed. Specifically, the calculated amount of overlay shift canbe used to calculate a correction value of overlay in the lithographyprocess to form a mask used in the processing of the contact holes CHand CHL in, for example, step S11.

After the process of step S12 described above, i.e. after themeasurement of the amount of overlay shift using the contact hole CHL,contacts CC and CCL are formed (step S13).

Specifically, the conductors are embedded in the contact holes CH andCHL by depositing the conductors in the configuration on thesemiconductor substrate 20. When the conductors are removed from the topsurface of the configuration, a contact CC is formed to correspond tothe position of the contact hole CH, and a contact CCL is formed tocorrespond to the position of the contact hole CHL.

As a method of removing the conductors from the top surface of theconfiguration, for example, chemical mechanical polishing (CMP) is used.That is, in step S13, for example, the conductors are removed from thetop surface of the configuration through the process of planarizing thetop surface of the configuration.

Therefore, for example, the top surface of the contact CC and that ofthe contact CCL are aligned with each other. In other words, the upperend of the contact CC is substantially equal to that of the contact CCLin the stacking direction of the stacked configuration of the insulatinglayer and the conductors 23 (word lines WL0 to WL11).

FIGS. 25 and 26 respectively show an example of a sectionalconfiguration of the active block ABLK1 and an example of a sectionalconfiguration of the dummy block DBLK1 after the processing in step S13in the case where no overlay is shifted in the contact hole CH or CHL.

As shown in FIG. 25, in the hookup area HA1, the contacts CC are formedin space formed by the contact holes CH. Each of the contacts CC formedin the contact holes CH is electrically connected to its correspondingconductor 23 at the bottom thereof.

As shown in FIG. 26, in the hookup area HA1, the contacts CCL are formedin space formed by the contact holes CHL. Each of the contacts CCLformed in the contact holes CHL is electrically connected to itscorresponding conductor 23 at the bottom thereof.

FIG. 27 shows an example of a sectional configuration of the dummy blockDBLK1 after the processing in step S13 in the case where the amount ofoverlay shift of the contact holes CH and CHL is large.

When the amount of overlay shift of the contact holes CH and CHL islarge as shown in FIG. 27, the contacts CCL formed in the contact holesCHL may be short-circuited among the conductors 23.

Specifically, for example, the contact CCL corresponding to the wordline WL9 is short-circuited among the word lines WL6 to WL9. Similarly,the contact CCL corresponding to the word line WL6 is short-circuitedamong the word lines WL3 to WL6. The contact CCL corresponding to theword line WL3 is short-circuited among the word lines WL0 to WL3. When acontact not shown includes a boundary between adjacent terracedportions, it may have a configuration of being short-circuited among theconductor 23.

Although conductors 23 of four layers are short-circuited in FIG. 27,the number of conductors 23 to be short-circuited may vary with thedirection of overlay shift. For example, when the contact CCL overlapsonly the boundary between adjacent terraced portions in the Y direction,it is configured to short-circuit conductors 23 of adjacent two layers.

As described above, in the semiconductor memory 1 according to theembodiment, a contact hole CH and a contact hole CHL whose diameterdiffers from that of the contact hole CH are opened at once in forming acontact CC. Then, for example, in the same process, a conductor isembedded inside each of the contact holes CH and CHL.

Note that the manufacturing processes described above are only anexample and another process may be inserted between the manufacturingprocesses. The timing with which the memory pillars MP are formed andthe timing with which the contact holes CH and CHL are formed may bereplaced with each other.

In the process of step S12 described above, for example, ahigh-acceleration scanning electron microscope (SEM) capable ofmeasuring a deep hole is used. In this case, too, the degree ofdifficulty in measuring the bottom of the contact hole CHL correspondingto the lower-layer word line WL (e.g. word line WL3) is higher than thatof difficulty in measuring the bottom of the contact hole CHLcorresponding to the upper-layer word line WL (e.g. word line WL9).

Thus, the diameter of the contact hole CHL is preferably set as large aspossible. The contact holes CHL are preferably designed to have such adiameter that the conductors can be embedded in the contact holes CHLand to flattened in the process of step S13.

Furthermore, according to the foregoing descriptions, the bottom of thecontact hole CHL is shaped like a true circle; however, it may be shapedlike an ellipse. In this case, the amount of overlay shift is determinedusing, for example, the radius of the major axis of the contact hole CHLand that of the minor axis thereof. When the bottom of the contact holeCHL is elliptical, the “outside diameter of the contact CCL” mayindicate the major axis or the minor axis.

[1-3] Advantages of Embodiment

The semiconductor memory 1 according to the embodiment described abovemakes it possible to improve the yield of the semiconductor memory 1.The following is a detailed description of the advantages of thesemiconductor memory 1 according to the embodiment.

In the semiconductor memory in which the memory cells are stacked inthree dimensions, the conductors, which are used as gate electrodes ofthe memory cells, and the interlayer insulating films are alternatelystacked to increase the number of stacked layers and thus achieve alarge capacity. Then, the conductors used as the gate electrodes of thememory cells, for example, are hooked up like a staircase at the end ofthe memory cell array (hookup area) and connected to the row decodermodule via the contacts connected to the terraced portions of the formedstaircase.

In the staircase configuration so formed in the hookup area, itssubsequent film forming process and heat treatment may cause to, forexample, warp the wafer and thus move the boundary between the stairs.When a variation of the position of the boundary between the stairs islarge, the contacts for the word lines WL are likely to be formed tooverlap the terraced portions of the word lines WL, which may cause ashort circuit among the word lines WL.

For example, the correction of overlay in the lithography process iscarried out using an alignment pattern formed in a dicing area on theouter periphery of an area on the wafer where the semiconductor memory 1is formed. In the overlay measurement in the lithography process,therefore, a variation of the position of a boundary between the stairscannot be detected.

In contrast, as a method of feeding back the variation of the positionof a boundary between the stairs, for example, it is considered to makea result inspection after the contacts are formed to be connected to thestaircase. In the result inspection after the formation of the contacts,however, it will be a destructive inspection because the section of thestaircase needs to be checked and also a long time is required until thefeedback. Further, it is necessary to check the section of the staircaseeach time the manufacturing process of the semiconductor memory ismodified.

Therefore, in the manufacturing method of the semiconductor memory 1according to the embodiment, the contact holes CHL are formed in thearea of the dummy block DBLK that is not used to hold data. The contactholes CHL are formed in the same process as the contact holes CH formedin the active block ABLK, and arranged in the staircase formed in thedummy block DBLK. Furthermore, the diameter of each of the contact holesCHL is designed to be larger than that of each of the contact holes CH.

When the amount of overlay shift increases after the boundary betweenthe stairs has varied, the possibility that the boundary can be viewedfrom the contact hole CHL becomes high by increasing the diameter of thecontact hole CHL. Since, furthermore, the contact holes CHL and CH areformed by the same process, the amount of overlay shift in the contacthole CHL is considered to be substantially the same as the amount ofoverlay shift in the contact hole CH.

As a result, in the manufacturing method of the semiconductor memory 1according to the embodiment, if the boundary between the stairs exposedto the bottoms of the contact holes CHL is checked, the amount ofoverlay shift in the contact holes CH based on the variation of theboundary between the stairs can be estimated.

Furthermore, in the manufacturing method of the semiconductor memory 1according to the embodiment, since, for example, a scanning electronmicroscope (SEM) is used as a method for measuring the amount of overlayshift, the variation (incline) of the boundary between the stairs can beevaluated non-destructively and conveniently.

As described above, in the manufacturing method of the semiconductormemory 1 according to the embodiment, the incline of the boundarybetween the stairs can be evaluated non-destructively and thus acorrection value of overlay can be fed back to a wafer (lot) to beprocessed next. Thus, an appropriate correction value of overlay can beused for the boundary between the stairs to improve the yield of thesemiconductor memory 1.

In the foregoing descriptions, the positions of the contacts CC areadjusted based on information that is fed back by the process of stepS12. However, the boundary between the stairs may be adjusted based onthe feedback information.

In the process of step S12, when the amount of overlay shift exceeds athreshold value, a lot including the wafer may be screened as adefective lot. Screening a number of defective lots during themanufacture of the semiconductor memory 1 can inhibit the manufacturingcosts of the semiconductor memory 1 from increasing.

[1-4] Modification to Embodiment

In the semiconductor memory 1 according to the embodiment describedabove, the arrangement of the contacts CC in the active block ABLK andthat of the contacts CCL in the dummy block DBLK are similar to eachother. The arrangement of the contacts CCL can be changed asappropriate. The first to fifth modifications to the embodiment will bedescribed in order below.

(First Modification)

FIG. 28 shows an example of a planar layout of the memory cell array 10in the semiconductor memory 1 according to a first modification to theembodiment. This planar layout differs from that of the memory cellarray 10 shown in FIG. 13 in the arrangement of contacts CCL.

As shown in FIG. 28, in the first modification, for example, the planarlayout of the memory cell array 10 is so designed that the central pointof each of the contacts CCL coincides with a crossing point CP of theboundary between the stairs.

Specifically, for example, the contacts CCL in the hookup area HA1 are,for example, in contact with their respective terraced portions of theconductors 23 corresponding to the word lines WL4, WL5, WL7 and WL8.Similarly, the other contacts CCL are in contact with two terracedportions adjacent in the X direction and two terraced portions adjacentin the Y direction to the two terraced portions.

Note that in the first modification, the outside diameter of eachcontact CCL may not necessarily be larger than that of each contact CC.That is, in the first modification, the outside diameter of each contactCCL may be the same as or smaller than that of each contact CC. Theother configurations of the semiconductor memory 1 according to thefirst modification are similar to those of the semiconductor memory 1according to the embodiment and thus their descriptions will be omitted.

FIG. 29 shows an example of a method of measuring an amount of overlayshift in the first modification to the embodiment and also shows anexample of a planar layout of the memory cell array 10 after the contactholes CHL are formed to correspond to the contacts CCL.

As shown in FIG. 29, in the first modification, a crossing point CP isused as a reference point of the overlay. In the first modification,therefore, even when the amount of overlay shift is small, boundaries(boundaries BDX and BDY) between the stairs can be included in an areawhere the contact holes CHL are formed.

As a result, in the manufacturing method of the semiconductor memory 1according to the first modification, the shift of overlay that is muchsmaller than that in the embodiment can be measured and thus theaccuracy of measurement of the overlay can be improved more than that inthe embodiment.

Note that in the first modification, each of the contacts CCL has onlyto coincide with at least the crossing point CP. In this case, too, inthe first modification, a point close to the crossing point CP is usedas a reference point of the overlay, with the result that a slight shiftof overlay can be detected.

(Second Modification)

FIG. 30 shows an example of a planar layout of the memory cell array 10in the semiconductor memory 1 according to a second modification to theembodiment. This planar layout differs from that of the memory cellarray 10 shown in FIG. 13 in the arrangement of contacts CCL.

As shown in FIG. 30, in the second modification, for example, the planarlayout of the memory cell array 10 is so designed that the outerperiphery of each of the contacts CCL is in contact with a crossingpoint CP of the boundary between the stairs.

Specifically, for example, the contacts CCL in the hookup area HA1 arein contact with their respective terraced portions of the conductors 23corresponding to the word lines WL2, WL4 and WL5. Similarly, the othercontacts CCL are in contact with the terraced portions with which thecenters of the contacts CCL coincide and two terraced portions adjacentin the X and Y directions to the terraced portions.

Note that in the second modification, the outside diameter of eachcontact CCL may not necessarily be larger than that of each contact CC.That is, in the second modification, the outside diameter of eachcontact CCL may be the same as or smaller than that of each contact CC.The other configurations of the semiconductor memory 1 according to thesecond modification are similar to those of the semiconductor memory 1according to the embodiment and thus their descriptions will be omitted.

FIG. 31 shows an example of a method of measuring an amount of overlayshift in the second modification to the embodiment and also shows anexample of a planar layout of the memory cell array 10 after the contactholes CHL are formed to correspond to the contacts CCL.

As shown in FIG. 31, in the second modification, a layout including aboundary BDY between word lines WL adjacent in the X direction and aboundary BDX between word lines WL adjacent in the Y direction isdesigned as a reference in an area where the contact holes CHL areformed.

In the second modification, therefore, an amount of overlay shift of thecontact holes CHL can be estimated from the results of measurements ofan interval XS between the central point and the boundary BDY in the Xdirection and an interval YS between the central point and the boundaryBDX in the Y direction.

As a result, in the manufacturing method of the semiconductor memory 1according to the second modification, the amount of overlay shift can beestimated from a smaller number of measurement results than that in theembodiment, and the amount of data about the measurements of overlay canbe decreased more than that in the embodiment. Like in the firstmodification, in the second modification, a slight shift of overlay canbe detected in the manufacturing method of the semiconductor memory 1according to the second modification.

Note that in the second modification, each of the contacts CCL need notnecessarily be designed such that its outer periphery is in contact withthe crossing point CP, but the contacts CCL have only to coincide withat least the boundaries BDX and BDY.

(Third Modification)

FIG. 32 shows an example of a planar layout of the memory cell array 10included in the semiconductor memory 1 according to a third modificationto the embodiment. This planar layout differs from that of the memorycell array 10 shown in FIG. 13 in the arrangement of contacts CCL.

As shown in FIG. 32, in the third modification, each of the contacts CCLis so designed that its plane is shaped like an ellipse extending in,for example, the X direction. The contacts CCL are each arranged so asto overlap, e.g. the boundary between the stairs.

Specifically, for example, the contacts CCL in the hookup area HA1 arein contact with their respective terraced portions of the conductors 23corresponding to the word lines WL1, WL2, WL4, WL5, WL7, WL8, WL10 andWL11. Similarly, the other contacts CCL are in contact with fourterraced portions arranged in the X direction and two terraced portionsadjacent in the Y direction to the four terraced portions.

Like in the embodiment, the contact holes CHL are preferably designed tohave such a diameter that the conductors can be embedded in the contactholes CHL and flattened in the process of step S13 shown in FIG. 16. Theother configurations of the semiconductor memory 1 according to thethird modification are similar to those of the semiconductor memory 1according to the embodiment and thus their descriptions will be omitted.

FIG. 33 shows an example of a method of measuring an amount of overlayshift in the third modification to the embodiment and also shows anexample of a planar layout of the memory cell array 10 after the contactholes CHL are formed to correspond to the contacts CCL.

As shown in FIG. 33, in the third modification, for example, a singleboundary BDX and a plurality of boundaries BDY are included in an areawhere the contact holes CHL are to be formed. When the contact holes CHLextend in the X direction, a plurality of measurement points can be setby measuring the amount of overlay shift.

Specifically, for example, intervals DY1, DY2, DY3 and DY4 between theboundary BDX and the inner peripheries of the contact holes CHL in theminor radius direction of the ellipse are measured. The intervals DY1,DY2, DY3 and DY4 are arranged to shift from one another in the Xdirection. The number of measurements of the intervals DY is not limitedto four but can be set optionally.

In the third modification, the amount of overlay shift is calculatedbased upon the results of measurements of the intervals DY1, DY2, DY3and DY4. Since an average value of the results of measurements can beused in the third modification, the results of measurements can beinhibited from varying.

As a result, in the manufacturing method of the semiconductor memory 1according to the third modification, the amount of overlay shift can beestimated with higher accuracy than in the embodiment. Like in the firstmodification, in the third modification, a slight shift of overlay canbe detected.

In the third modification, the contacts CCL are each shaped like anellipse extending in the X direction. However, the ellipse may extend inthe Y direction. In this case, too, if the contact holes CHL arearranged to include a boundary between the stairs, the amount of overlayshift can be estimated using a plurality of measurement results.

(Fourth Modification)

The contact holes CHL are different in the range of a measurable amountof overlay shift among the embodiment and modifications described above.

For example, the contact holes CHL in the embodiment are valid when theshift amount is large, and a slight shift cannot be detected. Thecontact holes CHL in the first modification are valid when the shiftamount is small, and a large shift cannot be detected.

The contact holes CHL in the second modification are suitable to detecta shift in, for example, the negative direction of the X direction andthe positive direction of the Y direction, but a detectable amount ofshift in the positive direction of the X direction and the negativedirection of the Y direction is reduced. In the contact holes CHL of thethird modification, for example, the shift amount in the Y direction canbe detected with high accuracy, but the contact holes CHL are notsuitable to detect the shift amount in the X direction.

Therefore, in the semiconductor memory 1 according to the fourthmodification of the embodiment, the foregoing contact holes CHL in theembodiment and the first to third modifications are used in combination.

FIG. 34 shows an example of a planar layout of the memory cell array 10in the semiconductor memory 1 according to the fourth modification tothe embodiment. This planar layout differs from that of the memory cellarray 10 shown in FIG. 13 in the arrangement and type of contacts CCL.

As shown in FIG. 34, the memory cell array 10 in the fourth modificationincludes the contact CCL1 according to the first modification, thecontact CCL2 according to the second modification and the contact CCL3according to the third modification.

The contacts CCL (contact holes CHL) in the embodiment and modificationsdescribed above may be arranged in combination. In the manufacturingmethod of the semiconductor memory 1 in the fourth modification, theamount of overlay shift can be measured with higher accuracy. Thecombination of the contacts CCL is not limited to that shown in FIG. 34,but they can be combined optionally.

(Fifth Modification)

In the semiconductor memory 1 according to the embodiment describedabove, between the block group BLKG and BL connection area BLtap,another area may be placed.

FIG. 35 shows an example of a planar layout of the memory cell array 10included in the semiconductor memory 1 according to a fifth modificationto the embodiment, extracting an area close to the BL connection areaBLtap between the block group BLKG0 and BLKG1.

As shown in FIG. 35, an invalid area is placed between the dummy blockDBLK disposed at an end portion of each block group BLKG and the BLconnection area BLtap adjacent to the block group BLKG. In other words,the BL connection area BLtap is placed, for example, between an invalidarea adjacent to the block group BLKG0 and an invalid area adjacent tothe block group BLKG1.

The invalid area does not include, for example, slits SLT, SLTa, SLTband SHE. Like the active block ABLK and dummy block DBLK, a word line WLcan be replaced in the vicinity of a slit SLT provided between the dummyblock DBLK and the invalid area. In the invalid area, in an area where aword line WL can be replaced, a memory pillar MP that is not used fordata storage may be disposed.

In the BL connection area BLtap, for example, no word line WL isreplaced; thus, a sacrificial member (e.g. nitride film) which has notbeen replaced with a word line WL may be left. That is, for example, astacked configuration of an oxide film and a nitride film is formed inthe BL connection area BLtap. In this case, a contact for electricallyconnecting the bit line BL and the sense amplifier module 16 under thememory cell array 10 penetrates the stacked configuration of an oxidefilm and a nitride film.

FIG. 36 shows an example of a planar layout of the memory cell array 10included in the semiconductor memory 1 according to the fifthmodification to the embodiment, extracting a dummy block DBLK and itsadjacent invalid area.

As shown in FIG. 36, the planar layout of the invalid area in the hookuparea HA1 is designed in the same manner as, for example, a planar layoutin which slits SLT, SLTa, SLTb and SHE are excluded from the dummy blockDBLK. The invalid area in the hookup area HA1 may have a staircaseconfiguration of word lines WL similar to the dummy block DBLK.

In the semiconductor memory 1 according to the fifth modification to theembodiment, contacts CCL are arranged on the stair portions of the wordlines WL formed in the invalid area. The contacts CCL in the fifthmodification are arranged in an area where the word line WL is replaced,that is, an area where the conductors 23 are formed. Also, a method ofarranging the contacts CCL within the invalid area in the fifthmodification can be applied to all of the embodiment and first to fourthmodifications described above.

Thus, in the semiconductor memory 1 according to the fifth modification,the use of the contact holes CHL formed in the invalid area during themanufacture makes it possible to evaluate the incline of the boundarybetween the stairs as in the embodiment and bring about the sameadvantage as that of the embodiment.

As described above, the contacts CCL of the above embodiment andmodifications may not necessarily be arranged in the dummy block DBLK.The contacts CCL have only to be arranged in at least the dummy blockDBLK or the invalid area and also may be arranged in both the dummyblock DBLK and the invalid area.

[2] Other Modifications

A semiconductor memory according to an embodiment includes first andsecond areas, an active region, a non-active region, a first stackedbody, a plurality of first pillars, a first contact, a second stackedbody, and a second contact. The first and second areas are arranged in afirst direction. The active region includes part of each of the firstand second areas. The non-active region includes part of each of thefirst and second areas. The first stacked body is in the active region.The first stacked body includes first insulators and first conductorswhich are alternately stacked. Each of the first conductors includes aterraced portion that does not overlap the upper first conductor in thesecond area. The plurality of first pillars each penetrates the firststacked body in the first area. The intersection between the firstpillar and the first conductor functions as a memory cell. The firstcontact is provided on a terraced portion of a first conductor in afirst interconnect layer. The second stacked body is in the non-activeregion. The second stacked body includes second insulators and secondconductors which are alternately stacked. Each of the second conductorsincludes a terraced portion that does not overlap the upper secondconductor in the second area. The second contact is in contact with asecond conductor in the first interconnect layer and a second conductorin a second interconnect layer different from the first interconnectlayer. The semiconductor memory according to the embodiment can thus beimproved in its yield.

The embodiment has been described by focusing attention on the amount ofoverlay shift of the contact holes CHL. In the process of step S12,however, a parameter other than the shift amount may be calculated. Forexample, measurement is carried out for each of the contact holes CHL tocalculate numerical values regarding the overlay, such as magnificationand rotation. In the embodiment, the number of measurement points can beincreased as appropriate and the number of types of parameters used forthe correction can be increased to feed back a more appropriatecorrection value.

In the embodiment, a scanning electron microscope (SEM) is used tomeasure the bottoms of the contact holes CHL. In the process of step S12described with reference to FIG. 16 in the embodiment, however, thebottoms of the contact holes CHL may be measured using other measuringdevices, and a device capable of measuring them at leastnon-destructively has only to be selected.

The embodiment has been described by focusing attention on the shift ofoverlay of the contacts CC and CCL in the stairs of the word lines WL.However, the configuration of the contacts used for measurement ofoverlay, such as the contact holes CHL, can also be applied to a processin which the other contacts are formed.

In the embodiment, the end portions of the word lines WL in the hookuparea HA are formed stepwise in three lines. However, the end portions ofthe word lines WL may have a staircase configuration of, for example,two lines or four or more lines.

In the embodiment, the even-numbered blocks BLK and the odd-numberedblocks BLK are different in the direction in which a voltage is appliedto the active blocks ABLK arranged in the Y direction. For example, thehookup area HA may be provided on only one side of the cell area CA inthe X direction. In this case, the voltage is applied to the stackedinterconnect corresponding to the active blocks ABLK in the block groupBLKG from the same direction.

In the embodiment, a voltage is applied to the stacked interconnect ofthe word lines WL, etc. from one side in the X direction. For example,the contacts CC can be provided in each of the hookup areas HA1 and HA2in an active block ABLK and a voltage may be applied to the word linesWL, etc. from both sides in the X direction.

The memory pillar MP may be so configured that a plurality of pillarsare connected in the Z direction. For example, the memory pillar MP maybe so configured that a pillar penetrating the conductor 24 (select gateline SGD) and a pillar penetrating a plurality of conductors 23 (wordlines WL) are connected. The memory pillar MP may also be so configuredthat a plurality of pillars penetrating their respective conductors 23are connected in the Z direction.

In the embodiment, though the slits SLT and SLTa are configured todivide the conductor 24, they need not divide the conductor 24. In thiscase, the memory pillar MP is so configured that a plurality of pillarsare connected in the Z direction. For example, the lower pillarpenetrates the conductors 22 and 23 and the upper pillar penetrates theconductor 24. The conductor 24 is divided by, for example, a slit otherthan the slits SLT and SLTa and, each of the conductors into which theconductor 24 is divided functions as a select gate line SGD.

In the semiconductor memory 1 according to the embodiment, theconductors 23 and 24 can be formed by performing a replacement processusing, for example, the slits SLT SLTa and SLTb. In this case, aplurality of support pillars each formed of an insulator and penetratinga stacked configuration in which the conductors 23 and 24 are formed,can be formed between, for example, adjacent slits SLT and SLTb. Thecontacts CCL of the embodiment may or may not overlap the supportpillars. When the contacts CCL overlap the support pillars, they mayinclude a portion that passes the conductor 23 through the area wherethe support pillars are formed.

In the embodiment, the semiconductor memory 1 has a configuration inwhich a circuit such as the sense amplifier module 16 is provided underthe memory cell array 10. However, for example, the semiconductor memory1 may have a configuration in which the memory cell array 10 and thesense amplifier module 16 are formed on the semiconductor substrate 20.In this case, for example, the memory pillar MP may be so configuredthat the semiconductor 31 and the source line SL are electricallyconnected through the bottom of the memory pillar MP.

The memory cell array 10 may have other configurations, which aredisclosed in, for example, U.S. patent application Ser. No. 12/407,403filed on Mar. 19, 2009 and entitled “THREE-DIMENSIONALLY STACKEDNON-VOLATILE SEMICONDUCTOR MEMORY,” U.S. patent application Ser. No.12/406,524 filed on Mar. 18, 2009 and entitled “THREE-DIMENSIONALLYSTACKED NON-VOLATILE SEMICONDUCTOR MEMORY,” U.S. patent application Ser.No. 12/679,991 filed on Mar. 25, 2010 and entitled “NON-VOLATILESEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF” and U.S.patent application Ser. No. 12/532,030 filed on Mar. 23, 2009 andentitled “SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREOF.” Allthe patent applications are incorporated in the present specification byreference.

The term “connected” used in the present specification indicates“electrical connection” and does not exclude, for example, anotherelement through which the electrical connection is made.

While certain embodiments have been described, these embodiments havebeen presented by the way of example only, and are not Intended to limitthe scope of the inventions. Indeed, the novel embodiments describedherein may embodied in a variety of other forms; Furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made with Out departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

1-20. (canceled)
 21. A semiconductor memory device comprising: asubstrate including an active block area and a dummy block area arrangedin a first direction; a plurality of first conductive layers stackedabove the substrate and spaced apart from each other, the firstconductive layers being disposed in the active block area and in thedummy block area; a plurality of insulating members extending in asecond direction intersecting both the first direction and a stackingdirection of the first conductive layers on both sides of the dummyblock area in the first direction, the insulating members being arrangedabove the substrate and partitioning the first conductive layers in thefirst direction; a plurality of first pillars extending in the stackingdirection through the first conductive layers in the active block area,intersections of the first pillars with at least one of the firstconductive layers functioning as memory cells; and a plurality of secondpillars extending in the stacking direction through the first conductivelayers in the dummy block area, wherein the substrate further includesan interconnect connection area in which a first contact electricallyconnecting an upper interconnect above the first conductive layers and acircuit disposed under the first conductive layers is provided, thedummy block area being disposed between the active block area and theinterconnect connection area, and the insulating members include a firstinsulating member on a first side of the dummy block area facing theactive block area and a second insulating member on a second side of thedummy block area facing the interconnect connection area, the firstconductive layers being further disposed in an adjacent area close tothe second insulating member on an opposite side of the dummy blockarea.
 22. The device of claim 21, further comprising: a plurality ofthird pillars extending in the stacking direction through the firstconductive layers in the adjacent area.
 23. The device of claim 21,wherein at least one of the first pillars is electrically connected tothe upper interconnect.
 24. The device of claim 21, further comprising:a second contact provided in the dummy block area, no upper interconnectbeing coupled to the second contact.
 25. The device of claim 21, whereinthe first conductive layers are stacked with a plurality of firstinsulating layers alternately in the stacking direction in the activeblock area, in the dummy block area, and in the adjacent area, the firstinsulating layers being partitioned by the insulating members in thefirst direction, and the first insulating layers and a plurality ofsecond insulating layers are alternately stacked in the stackingdirection in the interconnect connection area, the first contactextending in the stacking direction through the first insulating layersand the second insulating layers in the interconnect connection area.26. The device of claim 25, wherein each of the first insulating layersincludes an oxide film and each of the second insulating layers includesa nitride film.
 27. The device of claim 25, wherein the secondinsulating layers in the interconnect connection area are in contactwith the first conductive layers in the adjacent area.
 28. The device ofclaim 21, wherein the insulating members are provided on both sides ofthe active block area in the first direction, a width of the dummy blockarea in the first direction is approximately equal to a width of theactive block area in the second direction.
 29. The device of claim 28,wherein a width of the adjacent area in the first direction differs fromthe width of the dummy block area in the first direction and the widthof the active block area in the second direction.
 30. The device ofclaim 21, wherein a pitch of the second pillars in the dummy block areain the first direction is approximately equal to a pitch of the firstpillars in the active block area in the first direction.
 31. The deviceof claim 21, wherein the second pillars in the dummy block area have asame structure as the first pillars in the active block area.
 32. Asemiconductor memory device comprising: a substrate including first andsecond active block areas and first and second dummy block areasarranged in a first direction; a plurality of first conductive layersstacked above the substrate and spaced apart from each other, the firstconductive layers being disposed in the first and second active blockareas and in the first and second dummy block areas; a plurality ofinsulating members extending in a second direction intersecting both thefirst direction and a stacking direction of the first conductive layerson both sides of the first dummy block area in the first direction andon both sides of the second dummy block area in the first direction, theinsulating members being arranged above the substrate and partitioningthe first conductive layers in the first direction; a plurality of firstpillars extending in the stacking direction through the first conductivelayers in the first active block area, intersections of the firstpillars with at least one of the first conductive layers functioning asmemory cells; and a plurality of second pillars extending in thestacking direction through the first conductive layers in the firstdummy block area, wherein the substrate further includes an interconnectconnection area in which a first contact electrically connecting anupper interconnect above the first conductive layers and a circuitdisposed under the first conductive layers is provided, the first dummyblock area being disposed between the first active block area and theinterconnect connection area and the second dummy block area beingdisposed between the second active block area and the interconnectconnection area, and the insulating members include a first insulatingmember on a first side of the first dummy block area facing the firstactive block area and a second insulating member on a second side of thefirst dummy block area facing the interconnect connection area, thefirst conductive layers being further disposed in a first adjacent areaclose to the second insulating member on an opposite side of the firstdummy block area.
 33. The device of claim 32, further comprising: aplurality of third pillars extending in the stacking direction throughthe first conductive layers in the first adjacent area.
 34. The deviceof claim 32, further comprising: a plurality of fourth pillars extendingin the stacking direction through the first conductive layers in thesecond active block area, intersections of the fourth pillars with atleast one of the first conductive layers functioning as memory cells;and a plurality of fifth pillars extending in the stacking directionthrough the first conductive layers in the second dummy block area. 35.The device of claim 34, wherein the insulating members further include athird insulating member on a first side of the second dummy block areafacing the second active block area and a fourth insulating member on asecond side of the second dummy block area facing the interconnectconnection area, the first conductive layers being further disposed in asecond adjacent area close to the fourth insulating member on anopposite side of the second dummy block area.
 36. The device of claim35, wherein the first conductive layers are stacked with a plurality offirst insulating layers alternately in the stacking direction in thefirst and second active block areas, in the first and second dummy blockareas, and in the first and second adjacent areas, the first insulatinglayers being partitioned by the insulating members in the firstdirection, and the first insulating layers and a plurality of secondinsulating layers are alternately stacked in the stacking direction inthe interconnect connection area, the first contact extending in thestacking direction through the first insulating layers and the secondinsulating layers in the interconnect connection area.
 37. The device ofclaim 36, wherein each of the first insulating layers includes an oxidefilm and each of the second insulating layers includes a nitride film.38. The device of claim 36, wherein the second insulating layers in theinterconnect connection area are in contact with the first conductivelayers in the first adjacent area and the first conductive layers in thesecond adjacent area.
 39. The device of claim 32, wherein the secondpillars in the first dummy block area have a same structure as the firstpillars in the first active block area.
 40. The device of claim 34,wherein the second pillars in the first dummy block area and the fifthpillars in the second dummy block area have a same structure as thefirst pillars in the first active block area and the fourth pillars inthe second active block area.